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Featuring an N-Channel design
TO263Manufacturer:
Mfr.Part #:
IPB073N15N5ATMA1
Datasheet:
Series:
OptiMOS™-5
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
150 V
EDA/CAD Models:
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Infineon Technologies' IPB073N15N5ATMA1 power MOSFET is a high-quality solution designed for high-current automotive applications. Its low on-state resistance and high current-carrying capability make it suitable for power supplies, motor control, and inverters. The TO-263-3 package design ensures efficient heat dissipation, providing reliable performance even in high-power applications. Additionally, the device is AEC Q-101 qualified, meeting the industry's stringent standards for temperature, humidity, and mechanical stress, making it a reliable choice for harsh automotive environments
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | OptiMOS™-5 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | Rds On (Max) @ Id, Vgs | 7.3mOhm @ 57A, 10V |
Vgs(th) (Max) @ Id | 4.6V @ 160µA | Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 75 V |
FET Feature | - | Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPB073 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Guy and Igal delivered as promised...Nicely packaged and beautiful parts!!! My customer was able to meet production on time. Very professional and persistent with the order from start to end. IC market needs more of you two. Many thanks!!!