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IPL65R230C7AUMA1 +BOM

Robust and reliable device suitable for a wide range of electronic design

IPL65R230C7AUMA1 General Description

N-Channel 650 V 10A (Tc) 67W (Tc) Surface Mount PG-VSON-4

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Key Features

  • 650V voltage
  • Revolutionary best-in-class R
  • DS(on)
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Q
  • g
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology
  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS quality
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series CoolMOS™ C7
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
FET Feature - Power Dissipation (Max) 67W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number IPL65R230 RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Height 1.1 mm Length 8 mm
Product Type MOSFET Subcategory MOSFETs
Width 8 mm Part # Aliases IPL65R230C7 SP001032728
Unit Weight 0.006619 oz

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IPL65R230C7AUMA1 Datasheet PDF

Preliminary Specification IPL65R230C7AUMA1 PDF Download

IPL65R230C7AUMA1 PDF Preview

In Stock: 3,041

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.509 $2.51
200+ $0.971 $194.20
500+ $0.937 $468.50
1000+ $0.921 $921.00

The prices below are for reference only.

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