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IPP410N30NAKSA1 +BOM

N-Channel 300 V 44A (Tc) 300W (Tc) Through Hole PG-TO220-3

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IPP410N30NAKSA1
Datasheet:

IPP410N30NAKSA1 Datasheet (PDF)
Series:

OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

300 V
EDA/CAD Models:

Request Free CAD Models for IPP410N30NAKSA1

Email: [email protected]

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Tel: +852 95804164

IPP410N30NAKSA1 General Description

N-Channel 300 V 44A (Tc) 300W (Tc) Through Hole PG-TO220-3

Infineon Technologies Corporation Inventory

Key Features

Fast diode technology
Industry best R
DS(on)
Hard commutation ruggedness
Optimized hard switching behavior
Highest efficiency and power density
Board space and system cost reduction
High system reliability
Best switching performance
Easy-to-design products

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V	Current - Continuous Drain (Id) @ 25°C	44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	41mOhm @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA	Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	7180 pF @ 100 V
FET Feature	-	Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IPP410	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	300 V	Id - Continuous Drain Current	44 A
Rds On - Drain-Source Resistance	41 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	65 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	300 W	Channel Mode	Enhancement
Tradename	OptiMOS	Configuration	Single
Fall Time	9 ns	Forward Transconductance - Min	52 S
Height	15.65 mm	Length	10 mm
Product Type	MOSFET	Rise Time	9 ns
Factory Pack Quantity	500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	43 ns
Typical Turn-On Delay Time	16 ns	Width	4.4 mm
Part # Aliases	IPP410N30N SP001082134	Unit Weight	0.068784 oz