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IPU95R1K2P7AKMA1 +BOM
N-Channel 950 V 6A (Tc) 52W (Tc) Through Hole PG-TO251-3
PG-TO251-3-
Manufacturer:
-
Mfr.Part #:
IPU95R1K2P7AKMA1
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Datasheet:
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Series:
CoolMOS™ P7
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
950 V
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EDA/CAD Models:
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Availability: 5921 PCS
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IPU95R1K2P7AKMA1 General Description
N-Channel 950 V 6A (Tc) 52W (Tc) Through Hole PG-TO251-3
Key Features
- Best-in-class FOM R
- DS(on)
- oss
- g
- iss
- oss
- Best-in-class DPAK R
- DS(on)
- Best-in-class V
- GS(th)
- GS(th)
- Integrated Zener diode ESD protection up to Class 2 (HBM)
- Best-in-class quality and reliability
- Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS C3
- Enabling higher power density designs, BOM savings, and lower assembly cost
- Easy to drive and to design-in
- Better production yield by reducing ESD related failures
- Less production issues and reduced field returns
Specifications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | CoolMOS™ P7 |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 950 V | Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.7A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 140µA | Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 400 V |
FET Feature | - | Power Dissipation (Max) | 52W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IPU95R1 | RHoS | yes |
PBFree | yes | HalogenFree | yes |
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IPU95R1K2P7AKMA1 Datasheet PDF
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In Stock: 5,921
Minimum Order: 1
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