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IPT60R102G7XTMA1 +BOM

N-Channel 600 V 23A (Tc) 141W (Tc) Surface Mount PG-HSOF-8-2

IPT60R102G7XTMA1 General Description

N-Channel 600 V 23A (Tc) 141W (Tc) Surface Mount PG-HSOF-8-2

Infineon Technologies Corporation Inventory

Key Features

  • Gives best-in-class FOM R
  • DS(on)
  • xE
  • oss
  • DS(on)
  • xQ
  • G
  • Enables best-in-class R
  • DS(on)
  • Inbuilt 4
  • th
  • Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
  • Enables improved thermal performance R
  • th
  • Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
  • Improved power density due to low R
  • DS(on)
  • DS(on)
  • Production cost reduction by moving to SMD through quicker assembly times
Infineon Technologies Corporation Original Stock

Application

  • Telecom
  • Server
  • Solar
  • Industrial SMPS

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series CoolMOS™ G7
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 102mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 390µA Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 400 V
FET Feature - Power Dissipation (Max) 141W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number IPT60R102 RHoS yes
PBFree yes HalogenFree yes

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IPT60R102G7XTMA1 Datasheet PDF

Preliminary Specification IPT60R102G7XTMA1 PDF Download

IPT60R102G7XTMA1 PDF Preview

In Stock: 6,160

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $3.510 $3.51
10+ $3.079 $30.79
30+ $2.824 $84.72
100+ $2.565 $256.50
500+ $2.446 $1,223.00
1000+ $2.394 $2,394.00

The prices below are for reference only.

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