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MAGX-000035-01000P +BOM

RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC

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MAGX-000035-01000P General Description

RF Mosfet 50 V 30 mA 3.5GHz 17dB 10W

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Specifications

Product Category: RF JFET Transistors Transistor Type: HEMT
Technology: GaN-on-SiC Operating Frequency: 3.5 GHz
Gain: 14 dB Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 65 V Id - Continuous Drain Current: 500 mA
Output Power: 10 W Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 95 C Pd - Power Dissipation: 12 W
Mounting Style: SMD/SMT Packaging: Tray
Configuration: Single Forward Transconductance - Min: 0.2 S
Operating Temperature Range: - 40 C to + 95 C Product Type: RF JFET Transistors
Series: MAGX Factory Pack Quantity: 100
Subcategory: Transistors Type: GaN SiC HEMT

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