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MAPR-000912-500S00 +BOM

RF Bipolar Transistors 960-1215MHz 500W Gain: 9.0dB min

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MAPR-000912-500S00 General Description

RF Transistor NPN 80V 52.5A 500W Chassis Mount

MACOM Technology Solutions Inventory

Key Features

  • NPN Silicon Microwave Power Transistor
  • Internal Input and Output Impedance Matching
  • Gold Metallization System
  • Diffused Emitter Ballasting Resistors
  • High Efficiency Inter-Digitized Geometry
  • Broadband Class C Operation
  • Common Base Configuration
  • Hermetic Metal/Ceramic Package
  • RoHS compliant
  • Aerospace and Defense
  • ISM
MACOM Technology Solutions Original Stock

Application

  • Gain: 9 dB
  • Efficiency: 45 %
  • Bias Voltage: 50 V
  • Pout: 500 W
  • Min Frequency: 960 MHz
  • Max Frequency: 1,215 MHz

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition - Noise Figure (dB Typ @ f) -
Gain 9.44dB ~ 9.77dB Power - Max 500W
DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) 52.5A
Operating Temperature 200°C (TJ) Mounting Type Chassis Mount
Base Product Number MAPR-000912

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In Stock: 4,481

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1,753.737 $1,753.74
200+ $699.753 $139,950.60
500+ $676.369 $338,184.50
1000+ $664.815 $664,815.00

The prices below are for reference only.

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