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See Technical Specifications

MAT03FHZ +BOM

Small Signal Bipolar Transistor, 0.03A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon

Manufacturer:

ADI
Mfr.Part #:

MAT03FHZ
Datasheet:

MAT03FHZ Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Obsolete
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for MAT03FHZ

MAT03FHZ General Description

The MAT03FHZ is a versatile dual monolithic PNP transistor that stands out for its exceptional parametric matching and high frequency performance. With a low noise level of 1nV/√Hz maximum at 1 kHz, along with a high bandwidth of 190 MHz typical, this transistor is an excellent choice for demanding preamplifier applications. Its low offset voltage of 100 µV maximum further enhances its performance, making it a reliable option for various circuit designs

Key Features

Dual Matched PNP Transistor
Low Offset Voltage: 100 mV max
Low Noise: 1 nV/√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE = 0.3 Ω typ
Available in Die F

Specifications

Source Content uid	MAT03FHZ	Pbfree Code	No
Part Life Cycle Code	Obsolete	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	LOW NOISE	Collector Current-Max (IC)	0.02 A
Collector-Emitter Voltage-Max	36 V	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DC Current Gain-Min (hFE)	80	JEDEC-95 Code	TO-78
JESD-30 Code	O-MBCY-W6	JESD-609 Code	e4
Number of Elements	2	Number of Terminals	6
Operating Temperature-Max	150 °C	Polarity/Channel Type	PNP
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	GOLD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Application	AMPLIFIER
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	190 MHz
VCEsat-Max	0.1 V