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See Technical Specifications

MAT01AHZ +BOM

Matched Monolithic Dual Transistor

Manufacturer:

ADI
Mfr.Part #:

MAT01AHZ
Datasheet:

MAT01AHZ Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Not Recommended
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for MAT01AHZ

MAT01AHZ General Description

Precision engineering meets unparalleled stability in the MAT01AHZ monolithic dual NPN transistor. Through a sophisticated Silicon Nitride "Triple-Passivation" process, this transistor achieves unmatched reliability and performance consistency. Boasting an offset voltage of 40µV, temperature drift as low as 0.15µV/°C, and h_FE matching within 0.7%, the MAT01AHZ is the go-to choice for applications where accuracy is paramount

Key Features

Soft-start circuit reduces inrush current
Protection against overvoltage and undervoltage
Low leakage current 10 μA max

Application

Robotics and drones
Automotive electronics
Environmental monitoring devices

Specifications

Source Content uid	MAT01AHZ	Pbfree Code	No
Part Life Cycle Code	Not Recommended	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.21.00.95	Additional Feature	LOW NOISE
Case Connection	SUBSTRATE	Collector Current-Max (IC)	0.025 A
Collector-Emitter Voltage-Max	45 V	Configuration	SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE)	500	JEDEC-95 Code	TO-78
JESD-30 Code	O-MBCY-W6	JESD-609 Code	e4
Number of Elements	2	Number of Terminals	6
Operating Temperature-Max	150 °C	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	1.8 W	Power Dissipation-Max (Abs)	1.8 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	NICKEL PALLADIUM GOLD	Terminal Form	WIRE
Terminal Position	BOTTOM	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	450 MHz	VCEsat-Max	0.2 V