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MAT03FH +BOM

Matched dual PNP transistor with low noise

MAT03FH General Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 36V 20mA 190MHz 500mW Through Hole TO-78-6

Key Features

  • Dual Matched PNP Transistor
  • Low Offset Voltage: 100 mV max
  • Low Noise: 1 nV/√Hz @ 1 kHz max
  • High Gain: 100 min
  • High Gain Bandwidth: 190 MHz typ
  • Tight Gain Matching: 3% max
  • Excellent Logarithmic Conformance: rBE = 0.3 Ω typ
  • Available in Die F

Specifications

Source Content uid MAT03FH Pbfree Code No
Part Life Cycle Code Obsolete Pin Count 6
Reach Compliance Code ECCN Code EAR99
Additional Feature LOW NOISE Collector Current-Max (IC) 0.02 A
Collector-Emitter Voltage-Max 36 V Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DC Current Gain-Min (hFE) 80 JEDEC-95 Code TO-78
JESD-30 Code O-MBCY-W6 JESD-609 Code e0
Number of Elements 2 Number of Terminals 6
Operating Temperature-Max 150 °C Polarity/Channel Type PNP
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form WIRE
Terminal Position BOTTOM Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 190 MHz
VCEsat-Max 0.1 V

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