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MQ2N4858 +BOM

JFET N-Channel 40 V 360 mW Through Hole TO-18 (TO-206AA)

MQ2N4858 General Description

JFET N-Channel 40 V 360 mW Through Hole TO-18 (TO-206AA)

Microchip Technology, Inc Inventory
Microchip Technology, Inc Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsJFETs Series -
FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40 V
Drain to Source Voltage (Vdss) 40 V Current - Drain (Idss) @ Vds (Vgs=0) 8 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds 18pF @ 10V
Resistance - RDS(On) 60 Ohms Power - Max 360 mW
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Product Category: JFET Technology: Si
Mounting Style: Through Hole Transistor Polarity: N-Channel
Configuration: Single Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: 30 V Gate-Source Cutoff Voltage: 4 VDC
Drain-Source Current at Vgs=0: 5 mA Rds On - Drain-Source Resistance: 60 Ohms
Pd - Power Dissipation: 360 mW Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C Maximum Drain Gate Voltage: 30 V
Product Type: JFETs Factory Pack Quantity: 1
Subcategory: Transistors Type: JFET

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