This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IPD25N06S4L-30 +BOM

25A High Current N-Channel Transistor for Automotive Applications

Manufacturer:

Infineon
Mfr.Part #:

IPD25N06S4L-30
Datasheet:

IPD25N06S4L-30 Datasheet (PDF)
IDpuls Max:

92.0 A
RthJC Max:

5.1 K/W
Ptot Max:

29.0 W
Qualification:

Automotive

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IPD25N06S4L-30 General Description

The IPD25N06S4L-30 Power MOSFET is a high-performance semiconductor device designed for demanding power electronics applications. With a drain-source voltage rating of 60V and a continuous drain current of 25A, this MOSFET is capable of handling high power levels while maintaining efficient operation. Its low on-state resistance of 0.025 ohms minimizes power dissipation, making it an ideal choice for applications where energy efficiency is paramount

Key Features

Fast recovery time
Low on-resistance characteristic
Precise gate control
High-speed operation ensured

Application

Advanced battery technology
Smart grid applications
Efficient energy management

Specifications

IDpuls max	92.0 A	RthJC max	5.1 K/W
Ptot max	29.0 W	Qualification	Automotive
VDS max	60.0 V	RDS (on) max	30.0 mΩ
VGS(th) max	2.0 V	QG max	12.5 nC
Polarity	N	ID max	25.0 A
Technology	OptiMOS™-T2	VGS(th) min	1.2 V
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C