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R6002ENDTL +BOM
MOSFET Nch 600V 2A Power MOSFET
CPT3-
Manufacturer:
-
Mfr.Part #:
R6002ENDTL
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Datasheet:
-
REACH:
Details
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Availability: 8478 PCS
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R6002ENDTL General Description
N-Channel 600 V 1.7A (Tc) 20W (Tc) Surface Mount CPT3
Specifications
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 2 A |
Rds On - Drain-Source Resistance | 2.8 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 6.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 26 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 60 ns |
Forward Transconductance - Min | 500 mS | Product Type | MOSFET |
Rise Time | 16 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 12 ns |
Part # Aliases | R6002END | Unit Weight | 0.011640 oz |
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In Stock: 8,478
Minimum Order: 1
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