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R6012ANX +BOM

R6012ANX, a MOSFET transistor from ROHM, delivers robust performance with its 12A current rating and 600V voltage capability

R6012ANX General Description

N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM

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Key Features

  • 1) Low on-resistance.
  • 2) Fast switching speed.
  • 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
  • 4) Drive circuits can be simple.
  • 5) Parallel use is easy.
  • 6) Pb-free lead plating ; RoHS compliant

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 420 mOhms Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W Forward Transconductance - Min 3.5 S
Product Type MOSFET Factory Pack Quantity 500
Subcategory MOSFETs Unit Weight 0.068784 oz

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