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R6530ENXC7G +BOM
MOSFET 650V POWER MOSFET
TO-220FM-
Manufacturer:
-
Mfr.Part #:
R6530ENXC7G
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Datasheet:
-
Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 7072 PCS
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R6530ENXC7G General Description
N-Channel 650 V 30A (Ta) 86W (Tc) Through Hole TO-220FM
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 30 A | Rds On - Drain-Source Resistance | 140 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V, - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 90 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 86 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 70 ns | Product Type | MOSFET |
Rise Time | 70 ns | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | Power MOSFET |
Typical Turn-Off Delay Time | 200 ns | Typical Turn-On Delay Time | 30 ns |
Part # Aliases | R6530ENX |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $3.463 | $3.46 |
200+ | $1.341 | $268.20 |
500+ | $1.294 | $647.00 |
1000+ | $1.271 | $1,271.00 |
The prices below are for reference only.