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See Technical Specifications

R6007KNX +BOM

MOSFET Nch 600V 7A Si MOSFET

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

R6007KNX
Datasheet:

R6007KNX Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for R6007KNX

R6007KNX General Description

N-Channel 600 V 7A (Tc) 46W (Tc) Through Hole TO-220FM

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Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	7 A
Rds On - Drain-Source Resistance	570 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	14.5 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	46 W	Channel Mode	Enhancement
Series	Super Junction-MOS KN	Configuration	Single
Fall Time	25 ns	Forward Transconductance - Min	1.9 S
Product Type	MOSFET	Rise Time	22 ns
Factory Pack Quantity	500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	18 ns	Part # Aliases	R6007KNXC7G
Unit Weight	0.068784 oz

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In Stock: 5,853

Minimum Order: 1

Qty.	Unit Price	Ext. Price
1+	$1.218	$1.22
200+	$0.471	$94.20
500+	$0.456	$228.00
1000+	$0.446	$446.00

The prices below are for reference only.

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R6007KNX

ROHM Semiconductor

Availability: 5,853 PCS

TO-220FM

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