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100V Voltage-rated N-channel Silicon Transistor in TO-220AB Package, Capable of Handling 40A Current
TO-220-3Manufacturer:
Onsemi
Mfr.Part #:
RFP40N10
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Renesas Electronics' RFP40N10 MOSFET transistor is a cutting-edge solution for demanding power applications. Its high voltage and current ratings, combined with its low on-resistance and fast switching speed, make it a versatile and reliable choice for a wide range of electronic systems. The TO-220 package ensures efficient heat dissipation, extending the lifespan of the transistor and improving overall system performance. Engineers and designers can trust the RFP40N10 to deliver consistent and efficient power management in a compact and cost-effective package
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 40 A | Rds On - Drain-Source Resistance | 40 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 16 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 20 ns | Height | 16.3 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 30 ns | Factory Pack Quantity | 400 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 42 ns |
Typical Turn-On Delay Time | 17 ns | Width | 4.7 mm |
Part # Aliases | RFP40N10_NL | Unit Weight | 0.068784 oz |
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