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RFP40N10 +BOM

100V Voltage-rated N-channel Silicon Transistor in TO-220AB Package, Capable of Handling 40A Current

RFP40N10 General Description

Renesas Electronics' RFP40N10 MOSFET transistor is a cutting-edge solution for demanding power applications. Its high voltage and current ratings, combined with its low on-resistance and fast switching speed, make it a versatile and reliable choice for a wide range of electronic systems. The TO-220 package ensures efficient heat dissipation, extending the lifespan of the transistor and improving overall system performance. Engineers and designers can trust the RFP40N10 to deliver consistent and efficient power management in a compact and cost-effective package

Key Features

  • Fast switching and low power consumption
  • Efficient power management for high-speed apps
  • Suitable for data communication devices
    • Operating temperature range: -55°C to 125°C
    • Rugged design with ESD protection
    • Fully compliant with RoHS and REACH regulations

Application

  • Switching supplies
  • Power management
  • Battery charging

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 40 A Rds On - Drain-Source Resistance 40 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 16 W
Channel Mode Enhancement Configuration Single
Fall Time 20 ns Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 400
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 42 ns
Typical Turn-On Delay Time 17 ns Width 4.7 mm
Part # Aliases RFP40N10_NL Unit Weight 0.068784 oz

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