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IPB015N08N5ATMA1 +BOM

N-channel 80V 180A Power MOSFET Packaged in TO-263 with Tape and Reel Supply

Manufacturer:

INFINEON
Mfr.Part #:

IPB015N08N5ATMA1
Datasheet:

IPB015N08N5ATMA1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for IPB015N08N5ATMA1

IPB015N08N5ATMA1 General Description

The IPB015N08N5ATMA1 MOSFET transistor offers exceptional efficiency and power handling capabilities for a wide range of applications. Its N-channel design, combined with a low on resistance and high current rating, makes it ideal for demanding tasks that require reliable performance. The TO-263 package style ensures easy installation and secure connections, while the device's temperature and power ratings allow it to operate in harsh environments. With OptiMOS 5 Series technology and automotive qualification, this transistor is a top choice for engineers looking for high-quality components

Key Features

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
100% Avalanche tested
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Avalanche Energy Rating (Eas)	1230 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	180 A
Drain-source On Resistance-Max	0.0015 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263	JESD-30 Code	R-PSSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	720 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON