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MOSFET Differentiated MOSFETs
D2PAK-3Manufacturer:
Mfr.Part #:
IPB033N10N5LFATMA1
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Factory Lead Time:
52 Weeks
EDA/CAD Models:
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The gate threshold voltage of 2.5V on the IPB033N10N5LFATMA1 ensures seamless integration with standard driver circuits, making it a flexible option for various applications. Its low gate charge and input capacitance work together to reduce switching losses, ultimately improving efficiency in high-frequency switching scenarios. When efficiency and heat dissipation are top priorities, this MOSFET shines as a reliable and high-performing choice
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Avalanche Energy Rating (Eas) | 273 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 23 A | Drain-source On Resistance-Max | 0.0033 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 480 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Element Material | SILICON |
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