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See Technical Specifications

IPB048N15N5LFATMA1 +BOM

Type: Field Effect Transistor (FET)

Manufacturer:

INFINEON
Mfr.Part #:

IPB048N15N5LFATMA1
Datasheet:

IPB048N15N5LFATMA1 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

53 Weeks, 1 Day
EDA/CAD Models:

Request Free CAD Models for IPB048N15N5LFATMA1

IPB048N15N5LFATMA1 General Description

The OptiMOS Linear FET excels in reducing conduction losses, resulting in improved overall system efficiency. With the ability to handle higher in-rush currents, this product enables faster start-up times and minimizes downtime, enhancing overall operational efficiency

Key Features

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel; Normal level

100% Avalanche tested

Pb-free plating; RoHS compliant

Qualified according to JEDEC1) for target applications

Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Avalanche Energy Rating (Eas)	30 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	120 A	Drain-source On Resistance-Max	0.0048 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	23 pF
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	313 W
Pulsed Drain Current-Max (IDM)	480 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON