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See Technical Specifications

IPD068P03L3GATMA1 +BOM

40-volt-rated MOSFET trench technology

Manufacturer:

INFINEON
Mfr.Part #:

IPD068P03L3GATMA1
Datasheet:

IPD068P03L3GATMA1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for IPD068P03L3GATMA1

IPD068P03L3GATMA1 General Description

The OptiMOS family, to which IPD068P03L3GATMA1 belongs, is designed with the highest standards in mind and is also compliant with RoHS regulations, making it environmentally friendly. Furthermore, its small signal packages have been approved to AEC Q101, making it a suitable choice for automotive, consumer, eMobility, motor control, notebook, and onboard charger applications

Key Features

single P-Channel in DPAK Qualified according JEDEC1) for target applications 175 C operating temperature 100% Avalanche tested Pb-free; RoHS compliant, halogen free Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	149 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	70 A
Drain-source On Resistance-Max	0.0068 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	P-CHANNEL
Pulsed Drain Current-Max (IDM)	280 A	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON