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MOSFET Transistor IPD50R500CE N-Channel
TO-252-3Manufacturer:
Mfr.Part #:
IPD50R500CE
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
7.6A (Tc)
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N-Channel 500 V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V | Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V | Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA | Gate Charge (Qg) (Max) @ Vgs | 18.7 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 433 pF @ 100 V |
FET Feature | - | Power Dissipation (Max) | 57W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.085 | $1.08 |
200+ | $0.421 | $84.20 |
500+ | $0.406 | $203.00 |
1000+ | $0.398 | $398.00 |
The prices below are for reference only.