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See Technical Specifications

IPD600N25N3G +BOM

High Power Dissipation of 136 Watts

Manufacturer:

Infineon
Mfr.Part #:

IPD600N25N3G
Datasheet:

IPD600N25N3G Datasheet (PDF)
IDpuls Max:

100.0 A
Ptot Max:

136.0 W
VDS Max:

250.0 V
Polarity:

N

IPD600N25N3G General Description

The IPD600N25N3 G is a high-performance N-channel power MOSFET designed for various applications requiring high current and low on-state resistance. It features a drain-to-source voltage (VDS) rating of 250V, a continuous drain current (ID) of 600A, and a low on-state resistance (RDS(on)) of 0.25 mΩ.This MOSFET is housed in a TO-274 package, which has a low thermal resistance for efficient heat dissipation. It is capable of handling high power levels while maintaining high efficiency and reliability in a range of applications, including power supplies, motor control, welding equipment, and renewable energy systems.The IPD600N25N3 G offers high switching speeds and low gate charge, making it suitable for high-frequency switching applications. It also has built-in protection features such as overcurrent and overtemperature protection, ensuring safe and reliable operation under all conditions.

Key Features

High-speed switching capability
Fully encapsulated for added protection
Low gate-to-source voltage threshold
Excellent thermal resistance to package

Application

Switched-mode power
Industrial power supplies
Automotive systems

Specifications

IDpuls max	100.0 A	Ptot max	136.0 W
VDS max	250.0 V	Polarity	N
RDS (on) max	60.0 mΩ	ID max	25.0 A
VGS(th) max	4.0 V	VGS(th) min	2.0 V
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C