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IPT010N08NM5ATMA1 +BOM
High Power N-Channel MOSFET with 80V Voltage Rating, PG-HSOF-8 Package
8-PowerSFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IPT010N08NM5ATMA1
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Datasheet:
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Series:
OptiMOS™
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
80 V
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EDA/CAD Models:
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Availability: 7836 PCS
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IPT010N08NM5ATMA1 General Description
N-Channel 80 V 43A (Ta), 425A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8
Specifications
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 425A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.05mOhm @ 150A, 10V | Vgs(th) (Max) @ Id | 3.8V @ 280µA |
Gate Charge (Qg) (Max) @ Vgs | 223 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 40 V | Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPT010N |
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