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IPT013N08NM5LF +BOM
10V gate threshold voltage MOSFET with ultra-low leakage current of 250uA
8-PowerSFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IPT013N08NM5LF
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Datasheet:
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Series:
OptiMOS™ 5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
80 V
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EDA/CAD Models:
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IPT013N08NM5LF General Description
Infineon's IPT013N08NM5LF OptiMOS™ 5 linear FET 80V offers an innovative approach to power management in a compact TO-Leadless (TOLL) package. Boasting the industry's lowest on-state resistance RDS(on) and a wide safe operating area (SOA) at 25˚C, this linear FET sets a new standard for performance and efficiency. With its unique ability to excel in high-current, demanding applications like hot-swap and e-fuse systems, the IPT013N08NM5LF is the go-to choice for telecom and battery management systems seeking superior protection and reliability
Specifications
Series | OptiMOS™ 5 | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 333A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.3mOhm @ 150A, 10V | Vgs(th) (Max) @ Id | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 820 pF @ 40 V | Power Dissipation (Max) | 3.1W (Ta), 278W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPT013N |
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In Stock: 7,149
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