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IPT020N10N3 +BOM

High voltage and high current transistor MOSFET

IPT020N10N3 General Description

N-Channel 100 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1

Specifications

Source Content uid IPT020N10N3 Pbfree Code No
Part Life Cycle Code Not Recommended Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE Avalanche Energy Rating (Eas) 800 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.002 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-F8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 1200 A
Surface Mount YES Terminal Finish TIN
Terminal Form FLAT Terminal Position SINGLE
Transistor Element Material SILICON

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Qty. Unit Price Ext. Price
1+ $13.139 $13.14
200+ $5.084 $1,016.80
500+ $4.906 $2,453.00
1000+ $4.818 $4,818.00

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