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IPT020N10N5ATMA1 +BOM

MOSFET's high-frequency response enables smooth and quiet motor control

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPT020N10N5ATMA1
Datasheet:

IPT020N10N5ATMA1 Datasheet (PDF)
Series:

OptiMOS™5
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Models:

Request Free CAD Models for IPT020N10N5ATMA1

IPT020N10N5ATMA1 General Description

When it comes to high-power applications, the IPT020N10N5ATMA1 power MOSFET from Infineon Technologies is a standout choice. With its high voltage and current ratings, low on-resistance, and low gate charge, it is designed to deliver efficient and reliable performance in demanding environments. Its TO-220 package allows for easy integration into circuit designs, and its wide operating temperature range ensures that it will perform reliably in harsh conditions

Specifications

Series	OptiMOS™5	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 260A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 150A, 10V	Vgs(th) (Max) @ Id	3.8V @ 202µA
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 50 V	Power Dissipation (Max)	273W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPT020