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IPT026N10N5ATMA1 +BOM
Trench MOSFET designed for high voltage applications
8-PowerSFN-
Manufacturer:
Infineon Technologies
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Mfr.Part #:
IPT026N10N5ATMA1
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Datasheet:
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Series:
OptiMOS™5
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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EDA/CAD Models:
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IPT026N10N5ATMA1 General Description
The IPT026N10N5ATMA1 is a cutting-edge N-channel power MOSFET engineered by Infineon Technologies as part of the OptiMOS 5 power MOSFET series. With a focus on high efficiency and power density, this MOSFET boasts a 100V drain-source voltage, a continuous drain current of 160A, and a maximum on-state resistance of 2.6mOhm. Its TO-220 package ensures ease of mounting and effective heat dissipation, making it a reliable choice for a variety of applications
Specifications
Series | OptiMOS™5 | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 202A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.6mOhm @ 150A, 10V | Vgs(th) (Max) @ Id | 3.8V @ 158µA |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 50 V | Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | IPT026 |
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