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IPT029N08N5ATMA1 +BOM

High-Current, Low-Voltage N-Channel Power Semiconductor Device

IPT029N08N5ATMA1 General Description

N-Channel 80 V 52A (Ta), 169A (Tc) 168W (Tc) Surface Mount PG-HSOF-8-1

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 169 A Rds On - Drain-Source Resistance 2.9 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.2 V
Qg - Gate Charge 87 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 167 W
Channel Mode Enhancement Configuration Single
Fall Time 13 ns Forward Transconductance - Min 75 S
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 42 ns
Typical Turn-On Delay Time 20 ns Part # Aliases IPT029N08N5 SP001581494
Unit Weight 0.027197 oz

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