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IPT044N15N5ATMA1 +BOM

High-performance power device for efficient energy transmissio

IPT044N15N5ATMA1 General Description

N-Channel 150 V 174A (Tc) 300W (Tc) Surface Mount PG-HSOF-8

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 174 A Rds On - Drain-Source Resistance 4.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4.6 V
Qg - Gate Charge 67 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 300 W
Channel Mode Enhancement Product MOSFET
Product Type MOSFET Factory Pack Quantity 2000
Subcategory MOSFETs Part # Aliases IPT044N15N5 SP005537524

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