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IPT111N20NFDATMA1 +BOM

Tape and Reel Differentiated MOSFETs

Manufacturer:

INFINEON
Mfr.Part #:

IPT111N20NFDATMA1
Datasheet:

IPT111N20NFDATMA1 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for IPT111N20NFDATMA1

IPT111N20NFDATMA1 General Description

Designed with automotive applications in mind, the IPT111N20NFDATMA1 power MOSFET offers a winning combination of efficiency and performance. Its 200V voltage rating and 111A continuous drain current make it a versatile option for a wide range of automotive power applications, from transmission control to electric vehicle systems. With a low on-state resistance of 1.2mΩ, this MOSFET delivers power efficiently while minimizing power loss, making it a top choice for demanding automotive environments

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Avalanche Energy Rating (Eas)	375 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	96 A
Drain-source On Resistance-Max	0.0111 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	9.4 pF	JESD-30 Code	R-PSSO-F2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	375 W	Pulsed Drain Current-Max (IDM)	384 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	SINGLE
Transistor Element Material	SILICON