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See Technical Specifications

IPT60R022S7XTMA1 +BOM

With a power dissipation of 390W at a case temperature of 25°C, this MOSFET offers high performance and reliability for various applications

Manufacturer:

Infineon Technologies
Mfr.Part #:

IPT60R022S7XTMA1
Datasheet:

IPT60R022S7XTMA1 Datasheet (PDF)
Series:

CoolMOS™S7
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for IPT60R022S7XTMA1

IPT60R022S7XTMA1 General Description

Infineon Technologies' OptiMOS™ 5 family of MOSFETs includes the IPT60R022S7XTMA1, which offers a combination of efficiency, low conduction and switching losses, and easy mounting and installation thanks to its TO-220 package. This makes it an ideal choice for power management applications where energy efficiency is a primary concern. Whether it's in high-frequency switching applications, power supplies, or motor control systems, the IPT60R022S7XTMA1 delivers the performance and reliability required for demanding applications

Specifications

Series	CoolMOS™S7	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	22mOhm @ 23A, 12V	Vgs(th) (Max) @ Id	4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 12 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5639 pF @ 300 V	Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPT60R022