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IPT60R028G7 +BOM
Next-generation MOSFET design providing increased power density, reduced noise and vibration, and enhanced reliability
TOLL (HSOF-8)-
Manufacturer:
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Mfr.Part #:
IPT60R028G7
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Datasheet:
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Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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Avalanche Energy Rating (Eas):
288 mJ
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EDA/CAD Models:
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Availability: 5520 PCS
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IPT60R028G7 General Description
Introducing the IPT60R028G7, a groundbreaking superjunction MOSFET that combines the advanced features of CoolMOS™ C7 Gold technology with 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package. With this innovative design, the IPT60R028G7 opens up the possibility of SMD solutions for high current hard switching applications, including power factor correction (PFC) up to 3kW and high end LLC resonant circuits
Specifications
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 288 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 75 A |
Drain-source On Resistance-Max | 0.028 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSSO-F3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 391 W |
Pulsed Drain Current-Max (IDM) | 245 A | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | FLAT |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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In Stock: 5,520
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $13.536 | $13.54 |
The prices below are for reference only.
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