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IPTG007N06NM5ATMA1 +BOM

MOSFET TRENCH 40<-<100V

IPTG007N06NM5ATMA1 General Description

N-Channel 60 V 53A (Ta), 454A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOG-8-1

Key Features

  • Part number: IPG005M06NM5ATMA2
  • Package: DPAK-3 Full Pack
  • Transistor type: P-MOSFET
  • P-channel depletion mode
  • RDS(on) : 8mΩ
  • High voltage rating

Application

  • Precision pharmaceuticals
  • Revolutionary agriculture methods
  • High-quality food products

Specifications

Series OptiMOS™ 5 FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 53A (Ta), 454A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 150A, 10V Vgs(th) (Max) @ Id 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 261 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21000 pF @ 30 V Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IPTG007N

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