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IPW60R045CP +BOM
650V 60A TO247-3 N-Channel MOSFET CoolMOS CP
TO-247-
Manufacturer:
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Mfr.Part #:
IPW60R045CP
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Datasheet:
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RthJC Max:
0.29 K/W
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VGS(th) Max:
3.5 V
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VGS(th) Min:
2.5 V
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IDpuls Max:
230.0 A
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EDA/CAD Models:
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Availability: 7164 PCS
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IPW60R045CP General Description
Infineon Technologies' CoolMOS™ product line proudly presents the IPW60R045CP, a MOSFET that embodies the very best in power semiconductor technology. Boasting a drain-source voltage rating of 650V and a continuous drain current of 24A, this MOSFET stands ready for high-power applications with confidence. Its remarkably low on-state resistance of 45mΩ significantly reduces power losses, elevating the efficiency of power conversion systems. The compact TO-247 package not only simplifies installation and thermal management but also fortifies the MOSFET's resilience in demanding environments. With a high avalanche energy rating, the IPW60R045CP stands guard against voltage spikes and transient events, ensuring unwavering performance and longevity. Whether in industrial or automotive settings, this MOSFET shines as a beacon of reliability and efficiency, meeting the rigorous demands of modern high-voltage applications with ease
Key Features
- Superior thermal conductivity
- Robust electrostatic discharge protection
- Fast recovery time
- Low power loss
Application
- High-frequency operation
- Robust thermal performance
- Integrated protection features
Specifications
RthJC max | 0.29 K/W | VGS(th) max | 3.5 V |
VGS(th) min | 2.5 V | IDpuls max | 230.0 A |
RthJA max | 62.0 K/W | Operating Temperature min | -55.0 °C |
Ptot max | 431.0 W | VDS max | 600.0 V |
Polarity | N | ID max | 60.0 A |
RDS (on) max | 45.0 mΩ | Mounting | THT |
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[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 7,164
Minimum Order: 1
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