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MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP
TO-247-3Manufacturer:
Infineon Technologies
Mfr.Part #:
IPW60R165CP
Datasheet:
Series:
CoolMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
600 V
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The IPW60R165CP is a high-performance Power Field-Effect Transistor designed to deliver exceptional power conversion in a variety of electrical applications. With a maximum current rating of 21A and a voltage rating of 600V, this transistor is capable of handling high power loads with ease. The low on-state resistance of 0.165ohm ensures efficient power conversion with minimal energy loss, making it an ideal choice for energy-conscious designs
Series | CoolMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V | Vgs(th) (Max) @ Id | 3.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V | Power Dissipation (Max) | 192W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Base Product Number | IPW60R165 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $8.633 | $8.63 |
200+ | $3.342 | $668.40 |
500+ | $3.225 | $1,612.50 |
1000+ | $3.166 | $3,166.00 |
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