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Advanced RF transistor for high-frequency application
211-07-3Manufacturer:
Advanced Semiconductor, Inc.
Mfr.Part #:
MRF172
Datasheet:
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
9 A
Vds - Drain-Source Breakdown Voltage:
65 V
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Product Category | RF MOSFET Transistors | Transistor Polarity | N-Channel |
Technology | Si | Id - Continuous Drain Current | 9 A |
Vds - Drain-Source Breakdown Voltage | 65 V | Rds On - Drain-Source Resistance | 1.5 mOhms |
Operating Frequency | 200 MHz | Gain | 10 dB |
Output Power | 80 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Mounting Style | SMD/SMT |
Configuration | Single | Pd - Power Dissipation | 220 W |
Product Type | RF MOSFET Transistors | Factory Pack Quantity | 1 |
Subcategory | MOSFETs | Type | RF Power MOSFET |
Vgs - Gate-Source Voltage | 40 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
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