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MRF172 +BOM

Advanced RF transistor for high-frequency application

  • Manufacturer:

    Advanced Semiconductor, Inc.

  • Mfr.Part #:

    MRF172

  • Datasheet:

    MRF172 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Id - Continuous Drain Current:

    9 A

  • Vds - Drain-Source Breakdown Voltage:

    65 V

Key Features

  • PG= 10 dB Min. at 150 MHz
  • 30:1 Load VSWRCapability
  • Omnigold™ Metalization System

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 9 A
Vds - Drain-Source Breakdown Voltage 65 V Rds On - Drain-Source Resistance 1.5 mOhms
Operating Frequency 200 MHz Gain 10 dB
Output Power 80 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Mounting Style SMD/SMT
Configuration Single Pd - Power Dissipation 220 W
Product Type RF MOSFET Transistors Factory Pack Quantity 1
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage 40 V Vgs th - Gate-Source Threshold Voltage 5 V

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