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MRF6VP41KHR6 +BOM

Advanced radio-frequency component for wireless communicatio

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRF6VP41KHR6

  • Datasheet:

    MRF6VP41KHR6 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Vds - Drain-Source Breakdown Voltage:

    110 V

  • Minimum Operating Temperature:

    - 65 C

MRF6VP41KHR6 General Description

RF Mosfet 50 V 150 mA 450MHz 20dB 1000W NI-1230

NXP Inventory

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push--Pull Operation
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
NXP Original Stock
NXP Inventory

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Vds - Drain-Source Breakdown Voltage 110 V
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Channel Mode Enhancement
Configuration Dual Common Source Height 5.08 mm
Length 41.28 mm Product Type RF MOSFET Transistors
Factory Pack Quantity 150 Subcategory MOSFETs
Type RF Power MOSFET Vgs - Gate-Source Voltage - 6 V, 10 V
Width 10.29 mm Unit Weight 0.464036 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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