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MRF6VP121KHR6 +BOM

RF Mosfet 50 V 150 mA 1.03GHz 20dB 1000W NI-1230

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRF6VP121KHR6

  • Datasheet:

    MRF6VP121KHR6 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Vds - Drain-Source Breakdown Voltage:

    110 V

  • Operating Frequency:

    0.965 GHz to 1.215 GHz

MRF6VP121KHR6 General Description

RF Mosfet 50 V 150 mA 1.03GHz 20dB 1000W NI-1230

NXP Inventory

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push--Pull Operation
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
NXP Original Stock
NXP Inventory

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Vds - Drain-Source Breakdown Voltage 110 V
Operating Frequency 0.965 GHz to 1.215 GHz Gain 20 dB
Output Power 100 W Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Configuration Dual
Product Type RF MOSFET Transistors Series MRF6VP11KH
Factory Pack Quantity 150 Subcategory MOSFETs
Type RF Power MOSFET Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.4 V Unit Weight 0.464696 oz

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