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MRF281SR1 +BOM

Power amplifier module for NI- system

  • Manufacturer:

    NXP

  • Mfr.Part #:

    MRF281SR1

  • Datasheet:

    MRF281SR1 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Vds - Drain-Source Breakdown Voltage:

    65 V

  • Operating Frequency:

    1 GHz to 2.5 GHz

MRF281SR1 General Description

RF Mosfet 26 V 25 mA 1.93GHz 12.5dB 4W NI-200S

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 1 GHz to 2.5 GHz Gain 11 dB
Output Power 4 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Mounting Style SMD/SMT
Channel Mode Enhancement Configuration Single
Height 2.95 mm Length 5.16 mm
Pd - Power Dissipation 20 W Product Type RF MOSFET Transistors
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Width 4.14 mm

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