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Advanced S-band RF amplifier module for high-frequency electronics applications
NI-360HFManufacturer:
Mfr.Part #:
MRFG35010
Datasheet:
Transistor Type:
pHEMT
Technology:
GaAs
Operating Frequency:
3.55 GHz
Gain:
10 dB
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RF Mosfet 12 V 130 mA 3.55GHz 10dB 9W NI-360HF
Product Category | RF JFET Transistors | Transistor Type | pHEMT |
Technology | GaAs | Operating Frequency | 3.55 GHz |
Gain | 10 dB | Vds - Drain-Source Breakdown Voltage | 15 V |
Vgs - Gate-Source Breakdown Voltage | - 5 V | Id - Continuous Drain Current | 2.9 A |
Output Power | 10 W | Minimum Operating Temperature | - 20 C |
Maximum Operating Temperature | + 90 C | Pd - Power Dissipation | 28.3 W |
Mounting Style | Screw Mount | Configuration | Single |
Height | 4.47 mm | Length | 20.45 mm |
P1dB - Compression Point | 10 W | Product | RF JFET |
Product Type | RF JFET Transistors | Subcategory | Transistors |
Type | GaAs pHEMT | Width | 5.97 mm |
Unit Weight | 0.032480 oz | Frequency | 3.55GHz |
Voltage - Test | 12 V | Current - Test | 130 mA |
Power - Output | 9W | Voltage - Rated | 15 V |
Mounting Type | Chassis Mount | Base Product Number | MRFG35 |
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