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MRFE6VP8600HSR5 +BOM

High-power N-channel RF MOSFET suitable for radio frequency use

RF Mosfet 50 V 1.4 A 860MHz 19.3dB 125W NI-1230S

Capable of Handling>65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout)
Exceptional Efficiency for Class AB Analog or Digital Television Operation
Full Performance across Complete UHF TV Spectrum, 470--860 MHz
Capable of 600 Watt CW Output Power with Adequate Thermal Management
Integrated Input Matching
Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V − Improves Class C Performance, e.g. in a Doherty Peaking Stage − Enables Fast, Easy and Complete Shutdown of the Amplifier
Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation
Excellent Thermal Characteristics
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Product Category	RF MOSFET Transistors	Transistor Polarity	N-Channel
Technology	Si	Vds - Drain-Source Breakdown Voltage	140 V
Operating Frequency	470 MHz to 860 MHz	Gain	18.8 dB
Output Power	600 W	Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT	Configuration	Dual
Forward Transconductance - Min	15.6 S	Pd - Power Dissipation	1.52 kW
Product Type	RF MOSFET Transistors	Series	MRFE6VP8600H
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	LDMOS FET	Type	RF Power MOSFET
Vgs - Gate-Source Voltage	10 V	Vgs th - Gate-Source Threshold Voltage	2.07 V
Part # Aliases	935310858178	Unit Weight	0.467870 oz