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NGB8206ANTF4G +BOM

IGBT 390 V 20 A 150 W Surface Mount D2PAK

NGB8206ANTF4G General Description

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

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Key Features

  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (R
  • G
  • )and Gate-Emitter Resistor (R
  • GE
  • )

Application

  • Ignition Systems
  • Direct Fuel Injection
  • Coil-on-Plug
  • Driver-on-Coil
  • End Products:
  • Automotive

Specifications

feature-packaging Tape and Reel feature-rad-hard
feature-pin-count 3 feature-cecc-qualified
feature-esd-protection feature-military No
feature-aec-qualified Yes feature-aec-qualified-number
feature-eccn-code EAR99 feature-svhc Yes
feature-svhc-exceeds-threshold Yes

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