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NGTD21T65F2SWK +BOM

IGBT 650V 45A FS2 bare die

NGTD21T65F2SWK General Description

IV. Designed with a robust Field Stop II Trench construction, the NGTD21T65F2SWK Insulated Gate Bipolar Transistor (IGBT) is engineered for superior performance in demanding switching applications. With its low on-state voltage and minimal switching loss, this IGBT offers efficient and reliable operation, making it an ideal choice for industrial and electronic systems that require high functionality

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Key Features

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 5 µs Short Circuit Capability
  • These are Pb−Free Devices
ON Semiconductor, LLC Original Stock

Application

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
ON Semiconductor, LLC Inventory

Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG
Product Category IGBT Transistors Technology Si
Product Type IGBT Transistors Factory Pack Quantity 1
Subcategory IGBTs

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In Stock: 5,122

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.627 $2.63
200+ $1.018 $203.60
500+ $0.982 $491.00
1000+ $0.963 $963.00

The prices below are for reference only.

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