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NGTD20T120F2SWK +BOM

IGBT 1200V 20A FS2 bare die

NGTD20T120F2SWK General Description

Elevate your electronic circuits with the NGTD20T120F2SWK Insulated Gate Bipolar Transistor (IGBT), a cutting-edge component engineered for superior switching performance. Its robust Field Stop II Trench construction sets it apart from conventional IGBTs, delivering exceptional efficiency and cost-effectiveness. Say goodbye to excessive on-state voltage and switching loss - this IGBT offers a seamless solution for applications requiring high levels of precision and reliability. Upgrade your systems with the NGTD20T120F2SWK and experience seamless operation and improved power management like never before

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Key Features

  • Superior Surge Protection
  • Optimized Gate Drive Design
  • High-Current Capability
  • Low Saturation Current
  • Fast Turn-On Time
  • Improved Radiation Hardness
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Application

  • Energy Storage Systems
  • Inverter Maintenance Services
  • Alternative Energy Consultation
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Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG

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In Stock: 7,705

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.132 $2.13
200+ $0.825 $165.00
500+ $0.798 $399.00
1000+ $0.782 $782.00

The prices below are for reference only.

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