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NGTB20N120IHTG +BOM

IGBT Transistors 1200V/20A RC IGBT

NGTB20N120IHTG General Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

ON Semiconductor, LLC Inventory

Key Features

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss
ON Semiconductor, LLC Original Stock

Application

  • Induction Heating
  • Consumer Appliances
  • Soft Switching
ON Semiconductor, LLC Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
Base Product Number NGTB20

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NGTB20N120IHTG Datasheet PDF

Preliminary Specification NGTB20N120IHTG PDF Download

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