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See Technical Specifications

NGTD23T120F2WP +BOM

IGBT 1200V 25A FS2 bare die

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NGTD23T120F2WP
Datasheet:

NGTD23T120F2WP Datasheet (PDF)
MSL Temp (°C):

0
Container Type:

WJAR
Technology:

Si
Factory Pack Quantity:

1
EDA/CAD Models:

Request Free CAD Models for NGTD23T120F2WP

NGTD23T120F2WP General Description

This cutting-edge NGTD23T120F2WP product boasts an Insulated Gate Bipolar Transistor (IGBT) design renowned for its robustness and cost-effectiveness. Engineered with a sophisticated Field Stop II Trench construction, it stands out for its superior performance, especially in high-demand switching applications. With a focus on delivering exceptional results, this IGBT offers a combination of low on-state voltage and minimal switching loss, setting a new standard in efficiency and reliability

Key Features

Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
10 µs Short Circuit Capability
These are Pb−Free Devices

Application

Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding

Specifications

Status	Lifetime	Case Outline	-
MSL Temp (°C)	0	Container Type	WJAR
Product Category	IGBT Transistors	Technology	Si
Product Type	IGBT Transistors	Factory Pack Quantity	1
Subcategory	IGBTs