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NGTD28T65F2SWK +BOM

IGBT Trench Field Stop 650 V Surface Mount Die

NGTD28T65F2SWK General Description

Elevate your power electronics system with the NGTD28T65F2SWK Insulated Gate Bipolar Transistor (IGBT). This high-quality component boasts a Field Stop II Trench construction that ensures maximum performance and efficiency in demanding switching applications. With its low on-state voltage and minimal switching loss, the NGTD28T65F2SWK is engineered to meet the needs of today's power systems. Whether you're working on industrial machinery, renewable energy systems, or electric vehicles, this IGBT is the ultimate choice for superior performance and reliability

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Key Features

  • Economical Design Implemented
  • Advanced Technology Integrated Fully
  • Safe Operation Ensured Constantly
  • Easy Installation Provided Simply
  • Robust Construction Assured Always
  • Efficient Cooling System Enabled
ON Semiconductor, LLC Original Stock

Application

  • Efficient Solar Inverter
  • Backup UPS System
  • Advanced Welding Technology
ON Semiconductor, LLC Inventory

Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG

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