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See Technical Specifications

RQ3E080GNTB +BOM

8A, 30V N-Channel MOSFET in Surface Mount 8-HSMT Configuration

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RQ3E080GNTB
Datasheet:

RQ3E080GNTB Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for RQ3E080GNTB

RQ3E080GNTB General Description

Additionally, this product is HALOGEN FREE AND ROHS COMPLIANT, making it environmentally friendly and compliant with regulations. The transistor comes in an HSMT8 package with 8 pins, providing easy installation and integration into electronic circuits

Application

SWITCHING

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	16.7 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	5.8 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	2.4 ns
Forward Transconductance - Min	7 S	Product Type	MOSFET
Rise Time	3.6 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	17.3 ns	Typical Turn-On Delay Time	6.9 ns
Part # Aliases	RQ3E080GN