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RQ3E180BNTB1 +BOM

High-power MOSFET array for demanding applications

RQ3E180BNTB1 General Description

N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 39 A Rds On - Drain-Source Resistance 3.9 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 72 nC Maximum Operating Temperature + 150 C
Pd - Power Dissipation 20 W Channel Mode Enhancement
Configuration Single Fall Time 79 ns
Product Type MOSFET Rise Time 63 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Typical Turn-Off Delay Time 138 ns Typical Turn-On Delay Time 14 ns
Part # Aliases RQ3E180BN

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.726 $1.73
200+ $0.690 $138.00
500+ $0.667 $333.50
1000+ $0.654 $654.00

The prices below are for reference only.

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